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* Established Every single capacitor to a startup volt stage (if possible) so you don't need to watch & look forward to that capacitor to charge approximately normal managing voltage.

So can anyone please explain how FET with lower threshold voltage has better velocity and better leakage recent even though FET with substantial threshold will be gradual but lower on electrical power?

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The problem is for my analysis I ought to do things such as sweep voltage, frequency, load resistance and many others. to analyse their effect on the output

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Usually this comes about if you externally wire a crystal etc. - this introduces an incredibly large velocity oscillator which bottlenecks the simulation and is totally superfluous anyway. Clock frequency is specified for a property on the microcontroller gadget.